STGWT40V60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGWT40V60DF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
32 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
283W
Base Part Number
STGWT40
Element Configuration
Single
Power Dissipation
283W
Input Type
Standard
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
80A
Reverse Recovery Time
41 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.35V
Test Condition
400V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 40A
IGBT Type
Trench Field Stop
Gate Charge
226nC
Current - Collector Pulsed (Icm)
160A
Td (on/off) @ 25°C
52ns/208ns
Switching Energy
456μJ (on), 411μJ (off)
Height
26.7mm
Length
15.7mm
Width
5.7mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.861954
$1.861954
10
$1.756560
$17.5656
100
$1.657132
$165.7132
500
$1.563332
$781.666
1000
$1.474842
$1474.842
STGWT40V60DF Product Details
STGWT40V60DF Description
STGWT40V60DF is a member of the V series of IGBTs utilizing an advanced proprietary trench gate and field stop structure. Its ability to deliver low conduction and switching losses makes this device able to maximize the efficiency of any frequency converter. Safer paralleling operation can be ensured based on a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution.
STGWT40V60DF Features
Low conduction and switching losses
A slightly positive VCE(sat) temperature coefficient