STGF30M65DF2              Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

 STGF30M65DF2               Features

· 6 μs of short-circuit withstand time

· VCE(sat) = 1.55 V (typ.) @ IC = 30 A

· Tight parameters distribution

· Safer paralleling

· Low thermal resistance

· Soft and very fast recovery antiparallel diode

STGF30M65DF2              Applications

· Motor control

· UPS

· PFC