NGTB50N60S1WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
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NGTB50N60S1WG Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 4 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
417W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Element Configuration
Single
Input Type
Standard
Power - Max
417W
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
100A
Reverse Recovery Time
94 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.8V
Test Condition
400V, 50A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 50A
IGBT Type
Trench
Gate Charge
220nC
Current - Collector Pulsed (Icm)
200A
Td (on/off) @ 25°C
100ns/237ns
Switching Energy
1.5mJ (on), 460μJ (off)
Height
21.4mm
Length
16.25mm
Width
5.3mm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.143105
$4.143105
10
$3.908589
$39.08589
100
$3.687348
$368.7348
500
$3.478631
$1739.3155
1000
$3.281727
$3281.727
NGTB50N60S1WG Product Details
NGTB50N60S1WG Description
The NGTB50N60S1WG is an IGBT - Inverter Welding. With a low on-state voltage and little switching loss, This Insulated Gate Bipolar Transistor (IGBT) excels in demanding switching applications. It has a durable and economical trench structure. Applications involving welding are ideally suited for the IGBT. A soft and fast co-packaged free-wheeling diode with a low forward voltage is incorporated into the device.