IGW75N65H5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IGW75N65H5XKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2008
Series
TrenchStop™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
395W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
395W
Transistor Application
POWER CONTROL
Halogen Free
Halogen Free
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
650V
Max Collector Current
120A
Collector Emitter Breakdown Voltage
650V
Turn On Time
61 ns
Test Condition
400V, 75A, 8 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 75A
Turn Off Time-Nom (toff)
232 ns
IGBT Type
Trench
Gate Charge
160nC
Current - Collector Pulsed (Icm)
300A
Td (on/off) @ 25°C
28ns/174ns
Switching Energy
2.25mJ (on), 950μJ (off)
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.86000
$5.86
10
$5.30600
$53.06
240
$4.41504
$1059.6096
720
$3.81419
$2746.2168
1,200
$3.27551
$3.27551
IGW75N65H5XKSA1 Product Details
IGW75N65H5XKSA1 Description
The IGW75N65H5XKSA1 is Infineon's new TRENCHSTOP?5 IGBT technology that redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications.
IGW75N65H5XKSA1 Features
650V breakthrough voltage
Compared to Infineon's Best-in-class HighSpeed 3 family