STS1HNK60

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Manufacturer part number:STS1HNK60

Manufacturer:STMicroelectronics

Description:STS1HNK60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STS1HNK60 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	SuperMESH™
JESD-609 Code	e4
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory	FET General Purpose Power
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	300mA
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STS1
Pin Count	8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	6.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	3.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	156pF @ 25V
Current - Continuous Drain (Id) @ 25°C	300mA Tc
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Rise Time	5ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	25 ns
Continuous Drain Current (ID)	300mA
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	0.3A
Drain to Source Breakdown Voltage	600V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead