SPN04N60S5

new-10%

Manufacturer part number:SPN04N60S5

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 600V 0.8A SOT-223

Case Package:SOT-23

Datasheet:SPN04N60S5 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	CoolMOS™
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Subcategory	FET General Purpose Power
Voltage - Rated DC	650V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	700mA
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.8W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.8W
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	950m Ω @ 2.8A, 10V
Vgs(th) (Max) @ Id	5.5V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds	600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	800mA Ta
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	130 ns
Continuous Drain Current (ID)	800mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.8A
Drain-source On Resistance-Max	0.95Ohm
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	3A
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead