FDS2672-F085

new-10%

Manufacturer part number:FDS2672-F085

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 200V 3.9A 8-SOIC

Case Package:SOT-23

Datasheet:FDS2672-F085 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	230.4mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, UltraFET™
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Terminal Finish	Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	22 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	70m Ω @ 3.9A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2535pF @ 100V
Current - Continuous Drain (Id) @ 25°C	3.9A Ta
Gate Charge (Qg) (Max) @ Vgs	46nC @ 10V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	3.9A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.07Ohm
Drain to Source Breakdown Voltage	200V
Feedback Cap-Max (Crss)	45 pF
Radiation Hardening	No
RoHS Status	ROHS3 Compliant