STL8DN10LF3

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Manufacturer part number:STL8DN10LF3

Manufacturer:STMicroelectronics

Description:STL8DN10LF3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STL8DN10LF3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Cut Tape (CT)
Series	Automotive, AEC-Q101, STripFET™ III
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Powers
Max Power Dissipation	70W
Terminal Form	FLAT
Base Part Number	STL8
JESD-30 Code	R-PDSO-F6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	70W
Case Connection	DRAIN
Turn On Delay Time	8.7 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	35m Ω @ 4A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	970pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	20.5nC @ 10V
Rise Time	9.6ns
Drain to Source Voltage (Vdss)	100V
Fall Time (Typ)	5.2 ns
Turn-Off Delay Time	50.6 ns
Continuous Drain Current (ID)	20A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.05Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	31.2A
Avalanche Energy Rating (Eas)	190 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free