JANTX2N6284 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTX2N6284 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Contact Plating
Lead, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2002
Series
Military, MIL-PRF-19500/504
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Pin Count
2
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
175W
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
20A
DC Current Gain (hFE) (Min) @ Ic, Vce
1250 @ 10A 3V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
3V @ 200mA, 20A
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
3V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
7V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$60.89000
$60.89
JANTX2N6284 Product Details
JANTX2N6284 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1250 @ 10A 3V.A collector emitter saturation voltage of 3V ensures maximum design flexibility.A VCE saturation (Max) of 3V @ 200mA, 20A means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at 7V to gain high efficiency.A transition frequency of 4MHz is present in the part.Single BJT transistor is possible to have a collector current as low as 20A volts at Single BJT transistors maximum.
JANTX2N6284 Features
the DC current gain for this device is 1250 @ 10A 3V a collector emitter saturation voltage of 3V the vce saturation(Max) is 3V @ 200mA, 20A the emitter base voltage is kept at 7V a transition frequency of 4MHz
JANTX2N6284 Applications
There are a lot of Microsemi Corporation JANTX2N6284 applications of single BJT transistors.