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NSVBC857BTT1G

  • NSVBC857BTT1G
  • NSVBC857BTT1G

NSVBC857BTT1G

NSVBC857BTT1G

ON Semiconductor

NSVBC857BTT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSVBC857BTT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 200mW
Power - Max 200mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 650mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.380000 $0.38
10 $0.358491 $3.58491
100 $0.338199 $33.8199
500 $0.319055 $159.5275
1000 $0.300996 $300.996
NSVBC857BTT1G Product Details

NSVBC857BTT1G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 220 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.A maximum collector current of 100mA volts is possible.

NSVBC857BTT1G Features


the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA

NSVBC857BTT1G Applications


There are a lot of ON Semiconductor NSVBC857BTT1G applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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