2SA1419T-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SA1419T-TD-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-243AA
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
HTS Code
8541.21.00.75
Max Power Dissipation
500mW
Terminal Position
SINGLE
Terminal Form
FLAT
Reach Compliance Code
not_compliant
Base Part Number
2SA1419
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
500mW
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 5V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
160V
Transition Frequency
120MHz
Frequency - Transition
120MHz
Collector Base Voltage (VCBO)
180V
Emitter Base Voltage (VEBO)
6V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.023777
$2.023777
10
$1.909224
$19.09224
100
$1.801155
$180.1155
500
$1.699203
$849.6015
1000
$1.603021
$1603.021
2SA1419T-TD-E Product Details
2SA1419T-TD-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 5V DC current gain.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.As a result, the part has a transition frequency of 120MHz.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
2SA1419T-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V the vce saturation(Max) is 500mV @ 50mA, 500mA the emitter base voltage is kept at 6V a transition frequency of 120MHz
2SA1419T-TD-E Applications
There are a lot of ON Semiconductor 2SA1419T-TD-E applications of single BJT transistors.