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STP30NM60ND

STP30NM60ND

STP30NM60ND

STMicroelectronics

Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-247 Tube

SOT-23

STP30NM60ND Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Series FDmesh™ II
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STP30N
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 190W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 190W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 130m Ω @ 12.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 50V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Rise Time 50ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 75 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 25A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.385Ohm
Drain to Source Breakdown Voltage 600V
Avalanche Energy Rating (Eas) 900 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $5.14553 $5.14553

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