Welcome to Hotenda.com Online Store!

logo
userjoin
Home

STP60NF06

  • STP60NF06
  • STP60NF06

STP60NF06

STP60NF06

STMicroelectronics

STP60NF06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STP60NF06 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Manufacturer Package Identifier TO-220-POA
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series STripFET™ II
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 16mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 60A
Base Part Number STP60N
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 110W
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1660pF @ 25V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V
Rise Time 108ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 60A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 240A
Dual Supply Voltage 60V
Max Junction Temperature (Tj) 175°C
Height 19.68mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.46000 $1.46
50 $1.17040 $58.52
100 $1.02410 $102.41
500 $0.79420 $397.1
1,000 $0.62700 $0.627
2,500 $0.58520 $1.1704
5,000 $0.55594 $2.7797
STP60NF06 Product Details

STP60NF06 Description


This Power MOSFET series, which was created using STMicroelectronics' unique S Trip FET technology, was created with the goal of reducing input capacitance and gate charge. As a result, it can be used as the primary switch in sophisticated high-efficiency isolated DC-DC converters for telecommunications and computer applications. It's also suitable for any application requiring a low gate charge drive. STP60NF06 has a maximum power dissipation of 110W and an operating temperature of -55°C175°C TJ. STP60NF06 features three pins and is packaged in TO-220-3 format.



STP60NF06 Features


  • Exceptional dv/dt capability

  • 100% avalanche tested

  • Application-oriented characterization



STP60NF06 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


Related Part Number

IRFB3207PBF
Infineon Technologies
IRFB3207PBF
$0 $/piece
AON7292
Alpha & Omega Semiconductor Inc.
AON7292
$0 $/piece
IXFA36N20X3
IXYS
IXFA36N20X3
$0 $/piece
FDMS7670
ON Semiconductor
FDMS7670
$0 $/piece
FQP6N80
ON Semiconductor
FQP6N80
$0 $/piece
FDS6680
ON Semiconductor
FDS6680
$0 $/piece
NP82N04MDG-S18-AY
Rochester Electronics, LLC
NP82N04MDG-S18-AY
$0 $/piece
H5N2007LSTL-E
Renesas Electronics America
H5N2007LSTL-E
$0 $/piece
SIRA01DP-T1-GE3
Vishay Siliconix
SIRA01DP-T1-GE3
$0 $/piece
IXTH30N50P
IXYS
IXTH30N50P
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News