STY80NM60N

new-10%

Manufacturer part number:STY80NM60N

Manufacturer:STMicroelectronics

Description:Trans MOSFET N-CH 600V 74A 3-Pin(3+Tab) Max247 Tube

Case Package:SOT-23

Datasheet:STY80NM60N Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	MDmesh™ II
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	Not Applicable
Number of Terminations	3
ECCN Code	EAR99
Resistance	35MOhm
Terminal Finish	MATTE TIN
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	225
Base Part Number	STY80N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	447W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	447W
Turn On Delay Time	50 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	35m Ω @ 37A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	10100pF @ 50V
Current - Continuous Drain (Id) @ 25°C	74A Tc
Gate Charge (Qg) (Max) @ Vgs	360nC @ 10V
Rise Time	65ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	200 ns
Turn-Off Delay Time	440 ns
Continuous Drain Current (ID)	37A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	25V
Drain Current-Max (Abs) (ID)	74A
Drain to Source Breakdown Voltage	600V
Height	20.3mm
Length	15.9mm
Width	5.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free