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MJ11033G

MJ11033G

MJ11033G

ON Semiconductor

MJ11033G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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MJ11033G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Through Hole
Package / Case TO-204AE
Surface Mount NO
Number of Pins 2
Transistor Element Material SILICON
Operating Temperature -55°C~200°C TJ
Packaging Tray
Published 2002
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC -120V
Max Power Dissipation 300W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) 260
Current Rating 50A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 2
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 300W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 50A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 25A 5V
Current - Collector Cutoff (Max) 2mA
Vce Saturation (Max) @ Ib, Ic 3.5V @ 500mA, 50A
Collector Emitter Breakdown Voltage 120V
Collector Emitter Saturation Voltage 2.5V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 50A
Height 8.51mm
Length 38.86mm
Width 26.67mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $16.72000 $16.72
10 $15.36500 $153.65
100 $12.97690 $1297.69
500 $11.54390 $5771.95
MJ11033G Product Details

MJ11033G Overview


In this device, the DC current gain is 1000 @ 25A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 2.5V, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3.5V @ 500mA, 50A.Single BJT transistor is recommended to keep the continuous collector voltage at 50A in order to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.The current rating of this fuse is 50A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The maximum collector current is 50A volts.

MJ11033G Features


the DC current gain for this device is 1000 @ 25A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 3.5V @ 500mA, 50A
the emitter base voltage is kept at 5V
the current rating of this device is 50A

MJ11033G Applications


There are a lot of ON Semiconductor MJ11033G applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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