MJ11033G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJ11033G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mounting Type
Through Hole
Package / Case
TO-204AE
Surface Mount
NO
Number of Pins
2
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Tray
Published
2002
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory
Other Transistors
Voltage - Rated DC
-120V
Max Power Dissipation
300W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
260
Current Rating
50A
[email protected] Reflow Temperature-Max (s)
40
Pin Count
2
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
300W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
120V
Max Collector Current
50A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 25A 5V
Current - Collector Cutoff (Max)
2mA
Vce Saturation (Max) @ Ib, Ic
3.5V @ 500mA, 50A
Collector Emitter Breakdown Voltage
120V
Collector Emitter Saturation Voltage
2.5V
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
50A
Height
8.51mm
Length
38.86mm
Width
26.67mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$16.72000
$16.72
10
$15.36500
$153.65
100
$12.97690
$1297.69
500
$11.54390
$5771.95
MJ11033G Product Details
MJ11033G Overview
In this device, the DC current gain is 1000 @ 25A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 2.5V, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3.5V @ 500mA, 50A.Single BJT transistor is recommended to keep the continuous collector voltage at 50A in order to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.The current rating of this fuse is 50A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The maximum collector current is 50A volts.
MJ11033G Features
the DC current gain for this device is 1000 @ 25A 5V a collector emitter saturation voltage of 2.5V the vce saturation(Max) is 3.5V @ 500mA, 50A the emitter base voltage is kept at 5V the current rating of this device is 50A
MJ11033G Applications
There are a lot of ON Semiconductor MJ11033G applications of single BJT transistors.