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NSS60600MZ4T3G

NSS60600MZ4T3G

NSS60600MZ4T3G

ON Semiconductor

NSS60600MZ4T3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSS60600MZ4T3G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 11 Weeks
Lifecycle Status ACTIVE (Last Updated: 16 hours ago)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Frequency 100MHz
Base Part Number NSS60600
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Power - Max 800mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 600mA, 6A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 6V
hFE Min 150
Turn Off Time-Max (toff) 685ns
Turn On Time-Max (ton) 280ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.594710 $2.59471
10 $2.447840 $24.4784
100 $2.309283 $230.9283
500 $2.178569 $1089.2845
1000 $2.055254 $2055.254
NSS60600MZ4T3G Product Details

NSS60600MZ4T3G Overview


In this device, the DC current gain is 120 @ 1A 2V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 600mA, 6A.With the emitter base voltage set at 6V, an efficient operation can be achieved.As a result, the part has a transition frequency of 100MHz.A maximum collector current of 6A volts can be achieved.

NSS60600MZ4T3G Features


the DC current gain for this device is 120 @ 1A 2V
the vce saturation(Max) is 350mV @ 600mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

NSS60600MZ4T3G Applications


There are a lot of ON Semiconductor NSS60600MZ4T3G applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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