NSS60600MZ4T3G Overview

In this device, the DC current gain is 120 @ 1A 2V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 600mA, 6A.With the emitter base voltage set at 6V, an efficient operation can be achieved.As a result, the part has a transition frequency of 100MHz.A maximum collector current of 6A volts can be achieved.

NSS60600MZ4T3G Features

the DC current gain for this device is 120 @ 1A 2V
the vce saturation(Max) is 350mV @ 600mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

NSS60600MZ4T3G Applications

There are a lot of ON Semiconductor NSS60600MZ4T3G applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting