BC550B B1G

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Manufacturer part number:BC550B B1G

Manufacturer:Taiwan Semiconductor Corporation

Description:BC550B B1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

Case Package:SOT-23

Datasheet:BC550B B1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92
Operating Temperature	-65°C~150°C TJ
Packaging	Bulk
Published	2017
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power - Max	500mW
Transistor Type	NPN
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA 5V
Current - Collector Cutoff (Max)	15nA ICBO
Voltage - Collector Emitter Breakdown (Max)	45V
Current - Collector (Ic) (Max)	100mA
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$0.525166	$0.525166
10	$0.495440	$4.9544
100	$0.467396	$46.7396
500	$0.440940	$220.47
1000	$0.415981	$415.981

BC550B B1G Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 5V.TO-92 is the supplier device package for this product.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.