BC847A RFG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website
SOT-23
BC847A RFG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
200mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 2mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.030293
$0.030293
500
$0.022274
$11.137
1000
$0.018561
$18.561
2000
$0.017029
$34.058
5000
$0.015915
$79.575
10000
$0.014804
$148.04
15000
$0.014317
$214.755
50000
$0.014079
$703.95
BC847A RFG Product Details
BC847A RFG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 110 @ 2mA 5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 100mA.Product comes in the supplier's device package SOT-23.There is a 45V maximal voltage in the device due to collector-emitter breakdown.
BC847A RFG Features
the DC current gain for this device is 110 @ 2mA 5V the vce saturation(Max) is 500mV @ 5mA, 100mA the supplier device package of SOT-23
BC847A RFG Applications
There are a lot of Taiwan Semiconductor Corporation BC847A RFG applications of single BJT transistors.