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BC847A RFG

BC847A RFG

BC847A RFG

Taiwan Semiconductor Corporation

BC847A RFG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

SOT-23

BC847A RFG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 200mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.030293 $0.030293
500 $0.022274 $11.137
1000 $0.018561 $18.561
2000 $0.017029 $34.058
5000 $0.015915 $79.575
10000 $0.014804 $148.04
15000 $0.014317 $214.755
50000 $0.014079 $703.95
BC847A RFG Product Details

BC847A RFG Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 110 @ 2mA 5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 100mA.Product comes in the supplier's device package SOT-23.There is a 45V maximal voltage in the device due to collector-emitter breakdown.

BC847A RFG Features


the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 500mV @ 5mA, 100mA
the supplier device package of SOT-23

BC847A RFG Applications


There are a lot of Taiwan Semiconductor Corporation BC847A RFG applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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