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TSM2NB65CH X0G

TSM2NB65CH X0G

TSM2NB65CH X0G

Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 650V 2A TO251

SOT-23

TSM2NB65CH X0G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Supplier Device Package TO-251 (IPAK)
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 65W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 390pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant

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