CSD16401Q5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website
SOT-23
CSD16401Q5 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Series
NexFET™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
Termination
SMD/SMT
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Base Part Number
CSD16401
Pin Count
8
Number of Elements
1
Power Dissipation-Max
3.1W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3.1W
Case Connection
DRAIN
Turn On Delay Time
16.6 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.6m Ω @ 40A, 10V
Vgs(th) (Max) @ Id
1.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4100pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C
38A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs
29nC @ 4.5V
Rise Time
30ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
+16V, -12V
Fall Time (Typ)
12.7 ns
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
100A
Threshold Voltage
1.5V
Gate to Source Voltage (Vgs)
16V
Drain-source On Resistance-Max
0.0023Ohm
Drain to Source Breakdown Voltage
25V
Pulsed Drain Current-Max (IDM)
240A
Dual Supply Voltage
25V
Avalanche Energy Rating (Eas)
500 mJ
Nominal Vgs
1.5 V
Feedback Cap-Max (Crss)
230 pF
Height
1.05mm
Length
5mm
Width
6mm
Thickness
1mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$1.06120
$2.1224
CSD16401Q5 Product Details
CSD16401Q5 Description
CSD16401Q5 Power MOSFET was designed specifically to reduce resistance in a hot-swap and ORing applications and is not designed to be used in switching applications. CSD16401Q5 MOSFET is characterized by the following characteristics that it is low-thermal resistance, Avalanche Rated, Lead-Free Halogen-Free, and RoHS Compliant. CSD16401Q5 datasheet is ideal as a Solid State Relay Switch, DC-DC Conversion Secondary Side Synchronous Rectifier isolated Converter Secondary Side Switch as well as Motor Control.