FDMS7620S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website
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FDMS7620S Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Number of Pins
8
Weight
211mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Series
PowerTrench®
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory
FET General Purpose Power
Max Power Dissipation
2.5W
JESD-30 Code
R-PDSO-N6
Number of Elements
2
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.2W
Case Connection
DRAIN SOURCE
Turn On Delay Time
6.6 ns
Power - Max
1W
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
20m Ω @ 10.1A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
608pF @ 15V
Current - Continuous Drain (Id) @ 25°C
10.1A 12.4A
Gate Charge (Qg) (Max) @ Vgs
11nC @ 10V
Rise Time
1.8ns
Fall Time (Typ)
1.5 ns
Turn-Off Delay Time
17.4 ns
Continuous Drain Current (ID)
12.4A
Threshold Voltage
2.2V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
0.0101A
Drain to Source Breakdown Voltage
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Feedback Cap-Max (Crss)
31 pF
Height
750μm
Length
5mm
Width
6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
FDMS7620S Product Details
FDMS7620S Description
The device includes two specialized MOSFET in a unique Dual Power 56 package. It is designed to provide the best synchronous step-down power level in terms of efficiency and PCB utilization. The "high-end" MOSFET with low switching loss and the "low-end" SyncFET with low conduction loss complement each other.