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FDMS7620S

FDMS7620S

FDMS7620S

ON Semiconductor

FDMS7620S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDMS7620S Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 211mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory FET General Purpose Power
Max Power Dissipation 2.5W
JESD-30 Code R-PDSO-N6
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.2W
Case Connection DRAIN SOURCE
Turn On Delay Time 6.6 ns
Power - Max 1W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 10.1A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 608pF @ 15V
Current - Continuous Drain (Id) @ 25°C 10.1A 12.4A
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Rise Time 1.8ns
Fall Time (Typ) 1.5 ns
Turn-Off Delay Time 17.4 ns
Continuous Drain Current (ID) 12.4A
Threshold Voltage 2.2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.0101A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 31 pF
Height 750μm
Length 5mm
Width 6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.56980 $1.7094
6,000 $0.54131 $3.24786
15,000 $0.52096 $7.8144
FDMS7620S Product Details

FDMS7620S        Description


  The device includes two specialized MOSFET in a unique Dual Power 56 package. It is designed to provide the best synchronous step-down power level in terms of efficiency and PCB utilization. The "high-end" MOSFET with low switching loss and the "low-end" SyncFET with low conduction loss complement each other.

 

FDMS7620S       Features

 

Q1: N-Channel

Max rDS(on) = 20.0 m? at VGS = 10 V, ID = 10.1 A

Max rDS(on) = 30.0 m? at VGS = 4.5 V, ID = 7.5 A

Q2: N-Channel

Max rDS(on) = 11.2 m? at VGS = 10 V, ID = 12.4 A

Max rDS(on) = 14.2 m? at VGS = 4.5 V, ID = 10.9 A

Pinout optimized for simple PCB design

Thermally efficient dual Power 56 Package

RoHS Compliant


FDMS7620S                Applications


Notebook PC

 






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