SIA921EDJ-T1-GE3

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Manufacturer part number:SIA921EDJ-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 2P-CH 20V 4.5A SC70-6

Case Package:SOT-23

Datasheet:SIA921EDJ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual
Number of Pins	6
Weight	28.009329mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	59MOhm
Terminal Finish	MATTE TIN
Subcategory	Other Transistors
Max Power Dissipation	7.8W
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.9W
Case Connection	DRAIN
Turn On Delay Time	5 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	59m Ω @ 3.6A, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250μA
Current - Continuous Drain (Id) @ 25°C	4.5A
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	-4.5A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-20V
Pulsed Drain Current-Max (IDM)	15A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	750μm
Length	2.05mm
Width	2.05mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free