STB13005-1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
STB13005-1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
75W
Base Part Number
STB13005
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power - Max
75W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 2A 5V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
1V @ 1A, 4A
Collector Emitter Breakdown Voltage
400V
Emitter Base Voltage (VEBO)
9V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.006160
$3.00616
10
$2.836000
$28.36
100
$2.675472
$267.5472
500
$2.524030
$1262.015
1000
$2.381160
$2381.16
STB13005-1 Product Details
STB13005-1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 8 @ 2A 5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 9V can result in a high level of efficiency.Collector current can be as low as 4A volts at its maximum.
STB13005-1 Features
the DC current gain for this device is 8 @ 2A 5V the vce saturation(Max) is 1V @ 1A, 4A the emitter base voltage is kept at 9V
STB13005-1 Applications
There are a lot of STMicroelectronics STB13005-1 applications of single BJT transistors.