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2SB906-Y(TE16L1,NQ

  • 2SB906-Y(TE16L1,NQ
  • 2SB906-Y(TE16L1,NQ

2SB906-Y(TE16L1,NQ

2SB906-Y(TE16L1,NQ

Toshiba Semiconductor and Storage

2SB906-Y(TE16L1,NQ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

2SB906-Y(TE16L1,NQ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2013
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 1W
Frequency 9MHz
Number of Elements 1
Power Dissipation 1W
Transistor Type PNP
Collector Emitter Voltage (VCEO) -60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 5V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.7V @ 300mA, 3A
Collector Emitter Breakdown Voltage 60V
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 7V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.680880 $4.68088
10 $4.415925 $44.15925
100 $4.165967 $416.5967
500 $3.930157 $1965.0785
1000 $3.707695 $3707.695
2SB906-Y(TE16L1,NQ Product Details

2SB906-Y(TE16L1,NQ Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 5V.When VCE saturation is 1.7V @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 7V allows for a high level of efficiency.As a result, it can handle voltages as low as 60V volts.Maximum collector currents can be below 3A volts.

2SB906-Y(TE16L1,NQ Features


the DC current gain for this device is 100 @ 500mA 5V
the vce saturation(Max) is 1.7V @ 300mA, 3A
the emitter base voltage is kept at 7V

2SB906-Y(TE16L1,NQ Applications


There are a lot of Toshiba Semiconductor and Storage 2SB906-Y(TE16L1,NQ applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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