BC32716TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BC32716TA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 days ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Weight
240mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-45V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Current Rating
-800mA
Frequency
100MHz
Base Part Number
BC327
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
800mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-700mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
-10V
Emitter Base Voltage (VEBO)
-5V
hFE Min
100
Height
4.58mm
Length
4.58mm
Width
3.86mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$52.485840
$52.48584
10
$49.514943
$495.14943
100
$46.712211
$4671.2211
500
$44.068123
$22034.0615
1000
$41.573701
$41573.701
BC32716TA Product Details
BC32716TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 1V.The collector emitter saturation voltage is -700mV, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -800mA for this device.100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.The maximum collector current is 800mA volts.
BC32716TA Features
the DC current gain for this device is 100 @ 100mA 1V a collector emitter saturation voltage of -700mV the vce saturation(Max) is 700mV @ 50mA, 500mA the emitter base voltage is kept at -5V the current rating of this device is -800mA a transition frequency of 100MHz
BC32716TA Applications
There are a lot of ON Semiconductor BC32716TA applications of single BJT transistors.