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DSS5160U-7

DSS5160U-7

DSS5160U-7

Diodes Incorporated

DSS5160U-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DSS5160U-7 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 6.010099mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 400mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 150MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DSS5160
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 400mW
Gain Bandwidth Product 150MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 340mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage -340mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 200
Height 1mm
Length 2.15mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.134640 $0.13464
10 $0.127019 $1.27019
100 $0.119829 $11.9829
500 $0.113046 $56.523
1000 $0.106647 $106.647
DSS5160U-7 Product Details

DSS5160U-7 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 500mA 5V.The collector emitter saturation voltage is -340mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 340mV @ 100mA, 1A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.The part has a transition frequency of 150MHz.Input voltage breakdown is available at 60V volts.Collector current can be as low as 1A volts at its maximum.

DSS5160U-7 Features


the DC current gain for this device is 150 @ 500mA 5V
a collector emitter saturation voltage of -340mV
the vce saturation(Max) is 340mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz

DSS5160U-7 Applications


There are a lot of Diodes Incorporated DSS5160U-7 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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