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SMMBT3906WT1G

SMMBT3906WT1G

SMMBT3906WT1G

ON Semiconductor

SMMBT3906WT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

SMMBT3906WT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 250MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 40V
Current - Collector (Ic) (Max) 200mA
Transition Frequency 250MHz
Collector Base Voltage (VCBO) -40V
Turn On Time-Max (ton) 70ns
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.02325 $0.06975
6,000 $0.02104 $0.12624
15,000 $0.01840 $0.276
30,000 $0.01663 $0.4989
75,000 $0.01487 $1.11525
150,000 $0.01252 $1.878
SMMBT3906WT1G Product Details

SMMBT3906WT1G Overview


In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.When VCE saturation is 400mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).A transition frequency of 250MHz is present in the part.A maximum collector current of 200mA volts can be achieved.

SMMBT3906WT1G Features


the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
a transition frequency of 250MHz

SMMBT3906WT1G Applications


There are a lot of ON Semiconductor SMMBT3906WT1G applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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