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2SC2235-Y(6MBH1,AF

  • 2SC2235-Y(6MBH1,AF
  • 2SC2235-Y(6MBH1,AF

2SC2235-Y(6MBH1,AF

2SC2235-Y(6MBH1,AF

Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

SOT-23

2SC2235-Y(6MBH1,AF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Operating Temperature 150°C TJ
Packaging Bulk
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 900mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 120V
Current - Collector (Ic) (Max) 800mA
Frequency - Transition 120MHz
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.130045 $1.130045
10 $1.066080 $10.6608
100 $1.005736 $100.5736
500 $0.948807 $474.4035
1000 $0.895101 $895.101

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