BD135TG Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 150mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is recommended to keep the continuous collector voltage at 1.5A in order to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.A maximum collector current of 1.5A volts is possible.

BD135TG Features

the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V

BD135TG Applications

There are a lot of ON Semiconductor BD135TG applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver