MMBT123S-7-F Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 150 @ 100mA 1V.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 30mA, 300mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.There is a transition frequency of 100MHz in the part.Single BJT transistor can take a breakdown input voltage of 18V volts.Collector current can be as low as 1A volts at its maximum.
MMBT123S-7-F Features
the DC current gain for this device is 150 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 100MHz
MMBT123S-7-F Applications
There are a lot of Diodes Incorporated MMBT123S-7-F applications of single BJT transistors.
- Inverter
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- Driver
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- Interface
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- Muting
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