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NJVMJD31CRLG

NJVMJD31CRLG

NJVMJD31CRLG

ON Semiconductor

NJVMJD31CRLG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NJVMJD31CRLG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation1.56W
Power - Max 1.56W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1.2V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A 4V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage100V
Frequency - Transition 3MHz
Collector Base Voltage (VCBO) 100V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:23456 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.635000$0.635
10$0.599057$5.99057
100$0.565148$56.5148
500$0.533158$266.579
1000$0.502979$502.979

NJVMJD31CRLG Product Details

NJVMJD31CRLG Overview


This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the collector current and the base current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 375mA, 3A.Collector current can be as low as 3A volts at its maximum.

NJVMJD31CRLG Features


the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A

NJVMJD31CRLG Applications


There are a lot of ON Semiconductor NJVMJD31CRLG applications of single BJT transistors.

  • Interface

  • Inverter

  • Muting

  • Driver

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