NJVMJD31CRLG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NJVMJD31CRLG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
1.56W
Power - Max
1.56W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
1.2V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 3A 4V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage
100V
Frequency - Transition
3MHz
Collector Base Voltage (VCBO)
100V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.635000
$0.635
10
$0.599057
$5.99057
100
$0.565148
$56.5148
500
$0.533158
$266.579
1000
$0.502979
$502.979
NJVMJD31CRLG Product Details
NJVMJD31CRLG Overview
This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the collector current and the base current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 375mA, 3A.Collector current can be as low as 3A volts at its maximum.
NJVMJD31CRLG Features
the DC current gain for this device is 10 @ 3A 4V the vce saturation(Max) is 1.2V @ 375mA, 3A
NJVMJD31CRLG Applications
There are a lot of ON Semiconductor NJVMJD31CRLG applications of single BJT transistors.