PBSS4160QAZ Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 85 @ 1A 2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 245mV @ 50mA, 1A.There is a breakdown input voltage of 60V volts that it can take.In extreme cases, the collector current can be as low as 1A volts.

PBSS4160QAZ Features

the DC current gain for this device is 85 @ 1A 2V
the vce saturation(Max) is 245mV @ 50mA, 1A

PBSS4160QAZ Applications

There are a lot of Nexperia USA Inc. PBSS4160QAZ applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface