2SK3313(Q)

new-10%

Manufacturer part number:2SK3313(Q)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 500V 12A TO220NIS

Case Package:SOT-23

Datasheet:2SK3313(Q) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220NIS
Operating Temperature	150°C TJ
Packaging	Bulk
Published	1999
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	620mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	40W Tc
Element Configuration	Single
Power Dissipation	40W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	620mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2040pF @ 10V
Current - Continuous Drain (Id) @ 25°C	12A Ta
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	12A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Input Capacitance	2.04nF
Drain to Source Resistance	500mOhm
Rds On Max	620 mΩ
RoHS Status	RoHS Compliant
Lead Free	Lead Free