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SSM3J358R,LF

  • SSM3J358R,LF
  • SSM3J358R,LF

SSM3J358R,LF

SSM3J358R,LF

Toshiba Semiconductor and Storage

Small Low ON Resistance MOSFET P-Channel 20V 6A 3-Pin SOT-23F T/R

SOT-23

SSM3J358R,LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SOT-23-3 Flat Leads
Supplier Device Package SOT-23F
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series U-MOSVII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1W Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 22.1mOhm @ 6A, 8V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1331pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Gate Charge (Qg) (Max) @ Vgs 38.5nC @ 8V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 8V
Vgs (Max) ±10V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.050135 $0.050135
500 $0.036864 $18.432
1000 $0.030720 $30.72
2000 $0.028183 $56.366
5000 $0.026340 $131.7
10000 $0.024502 $245.02
15000 $0.023696 $355.44
50000 $0.023300 $1165

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