SSM6L36TU,LF

new-10%

Manufacturer part number:SSM6L36TU,LF

Manufacturer:Toshiba Semiconductor and Storage

Description:SMALL SIGNAL MOSFET N-CH + P-CH

Case Package:SOT-23

Datasheet:SSM6L36TU,LF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	150°C
Packaging	Tape & Reel (TR)
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Operating Mode	ENHANCEMENT MODE
Power - Max	500mW Ta
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	630m Ω @ 200mA, 5V, 1.31 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	46pF 43pF @ 10V
Current - Continuous Drain (Id) @ 25°C	500mA Ta 330mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.23nC, 1.2nC @ 4V
Drain to Source Voltage (Vdss)	20V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Drain Current-Max (Abs) (ID)	0.5A
Drain-source On Resistance-Max	0.85Ohm
DS Breakdown Voltage-Min	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate, 1.5V Drive
RoHS Status	RoHS Compliant