SI7923DN-T1-GE3

new-10%

Manufacturer part number:SI7923DN-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 30V 6.4A 2.8W 47mohm @ 10V

Case Package:SOT-23

Datasheet:SI7923DN-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8 Dual
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Max Power Dissipation	1.3W
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SI7923
Pin Count	8
JESD-30 Code	S-XDSO-C6
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	47m Ω @ 6.4A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Current - Continuous Drain (Id) @ 25°C	4.3A
Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	28 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	6.4A
Threshold Voltage	-1V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	4.3A
Drain-source On Resistance-Max	0.047Ohm
Drain to Source Breakdown Voltage	-30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant