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IRF9630S

IRF9630S

IRF9630S

Vishay Siliconix

MOSFET P-CH 200V 6.5A D2PAK

SOT-23

IRF9630S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Weight 1.437803g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -200V
Technology MOSFET (Metal Oxide)
Current Rating -6.5A
Number of Channels 1
Power Dissipation-Max 3W Ta 74W Tc
Element Configuration Single
Power Dissipation 74W
Turn On Delay Time 12 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 800mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.5A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Rise Time 27ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 6.5A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -200V
Input Capacitance 700pF
Drain to Source Resistance 800mOhm
Rds On Max 800 mΩ
Height 4.83mm
Length 10.67mm
Width 9.02mm
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

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