IRLI620G

new-10%

Manufacturer part number:IRLI620G

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 200V 4A TO220FP

Case Package:SOT-23

Datasheet:IRLI620G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack, Isolated Tab
Number of Pins	3
Supplier Device Package	TO-220-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2017
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Current Rating	4.1A
Power Dissipation-Max	30W Tc
Element Configuration	Single
Power Dissipation	30W
Turn On Delay Time	4.2 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	800mOhm @ 2.4A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	360pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4A Tc
Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
Rise Time	31ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	4V 5V
Vgs (Max)	±10V
Fall Time (Typ)	17 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	4A
Gate to Source Voltage (Vgs)	10V
Drain to Source Breakdown Voltage	200V
Input Capacitance	360pF
Drain to Source Resistance	800mOhm
Rds On Max	800 mΩ
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead