SI1032R-T1-GE3

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Manufacturer part number:SI1032R-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 140MA SC-75A

Case Package:SOT-23

Datasheet:SI1032R-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-75A
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	5Ohm
Additional Feature	LOW THRESHOLD
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	250mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250mW
Turn On Delay Time	50 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C	140mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.75nC @ 4.5V
Rise Time	25ns
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±6V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	200mA
Threshold Voltage	900mV
Gate to Source Voltage (Vgs)	6V
Drain to Source Breakdown Voltage	20V
Height	700μm
Length	1.58mm
Width	760μm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free