SI2305ADS-T1-GE3

new-10%

Manufacturer part number:SI2305ADS-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 8.0V 4.1A 1.7W 40 mohms @ 4.5V

Case Package:SOT-23

Datasheet:SI2305ADS-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-50°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	40MOhm
Terminal Finish	MATTE TIN
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Power Dissipation-Max	960mW Ta 1.7W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	960mW
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	40m Ω @ 4.1A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	740pF @ 4V
Current - Continuous Drain (Id) @ 25°C	5.4A Tc
Gate Charge (Qg) (Max) @ Vgs	15nC @ 4.5V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	-4.1A
Threshold Voltage	-800mV
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	5.4A
Drain to Source Breakdown Voltage	8V
Nominal Vgs	-800 mV
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free