SI4427BDY-T1-GE3

new-10%

Manufacturer part number:SI4427BDY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 30V 12.6A 2.5W 12.5mohm @ 4.5V

Case Package:SOT-23

Datasheet:SI4427BDY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	186.993455mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	19.5mOhm
Terminal Finish	MATTE TIN
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Turn On Delay Time	12 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	10.5m Ω @ 12.6A, 10V
Vgs(th) (Max) @ Id	1.4V @ 250μA
Current - Continuous Drain (Id) @ 25°C	9.7A Ta
Gate Charge (Qg) (Max) @ Vgs	70nC @ 4.5V
Rise Time	15ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±12V
Fall Time (Typ)	110 ns
Turn-Off Delay Time	242 ns
Continuous Drain Current (ID)	-12.6A
Threshold Voltage	-600mV
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	9.7A
Drain to Source Breakdown Voltage	-30V
Dual Supply Voltage	-30V
Nominal Vgs	-1.4 V
Height	1.55mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant