SI4559ADY-T1-GE3

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Manufacturer part number:SI4559ADY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N/P-CH 60V 5.3A 8-SOIC

Case Package:SOT-23

Datasheet:SI4559ADY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	58MOhm
Subcategory	Other Transistors
Max Power Dissipation	3.4W
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	SI4559
Pin Count	8
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	30 ns
Power - Max	3.1W 3.4W
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	58m Ω @ 4.3A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	665pF @ 15V
Current - Continuous Drain (Id) @ 25°C	5.3A 3.9A
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	70ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	30 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	4.5A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	4.3A
Drain to Source Breakdown Voltage	60V
Avalanche Energy Rating (Eas)	6.1 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.55mm
Length	5mm
Width	4mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free