SI7100DN-T1-E3

new-10%

Manufacturer part number:SI7100DN-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 8V 35A 1212-8

Case Package:SOT-23

Datasheet:SI7100DN-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-50°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	PURE MATTE TIN
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
JESD-30 Code	S-XDSO-C5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.8W Ta 52W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.5m Ω @ 15A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3810pF @ 4V
Current - Continuous Drain (Id) @ 25°C	35A Tc
Gate Charge (Qg) (Max) @ Vgs	105nC @ 8V
Rise Time	52ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	53 ns
Continuous Drain Current (ID)	26.1A
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	35A
Drain-source On Resistance-Max	0.0035Ohm
Drain to Source Breakdown Voltage	8V
Pulsed Drain Current-Max (IDM)	60A
Height	1.04mm
Length	3.05mm
Width	3.05mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant