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FDD6680

FDD6680

FDD6680

ON Semiconductor

FDD6680 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDD6680 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2004
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number FDD6680
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.3W Ta 56W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1230pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A Ta 46A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 55A
Drain-source On Resistance-Max 0.0105Ohm
Pulsed Drain Current-Max (IDM) 100A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 205 mJ
In-Stock:5317 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.41000$1.41
500$1.3959$697.95
1000$1.3818$1381.8
1500$1.3677$2051.55
2000$1.3536$2707.2
2500$1.3395$3348.75

FDD6680 Product Details

FDD6680 Description

FDD6680 N-Channel MOSFET is tailored to minimize the on-state resistance and yet maintain superior switching performance. FDD6680 datasheet can remove the additional components and improve system reliability in certain applications that require performance improvement of the body diode. ON Semiconductor FDD6680 is used in DC/DC converters, synchronous or conventional switching PWM controllers.

FDD6680 Features

High power and current handling capability

Includes SyncFET? Schottky body diode

Low gate charge

High performance trench technology

RDS(ON) = 13.0 mΩ @ VGS = 4.5 V

FDD6680 Applications

DC/DC converters

PWM controllers

Synchronous PWM controllers

conventional switching PWM controllers


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