STL30P3LLH6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STL30P3LLH6 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Operating Temperature
175°C TJ
Packaging
Cut Tape (CT)
Series
DeepGATE™, STripFET™ VI
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STL30
Power Dissipation-Max
75W Tc
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
30m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds
1450pF @ 25V
Current - Continuous Drain (Id) @ 25°C
30A Tc
Gate Charge (Qg) (Max) @ Vgs
12nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
30A
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:6298 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
STL30P3LLH6 Product Details
STL30P3LLH6 Description
STL30P3LLH6 is a 30v P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET STL30P3LLH6 exhibits very low RDS(on) in all packages. The STMicroelectronics STL30P3LLH6 can be applied in switching applications due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor STL30P3LLH6 is in the PowerFLAT-5x6-8 package with 4.8W power dissipation.
STL30P3LLH6 Features
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Drain-source voltage: 30v
STL30P3LLH6 Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch
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