SI7216DN-T1-GE3

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Manufacturer part number:SI7216DN-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 2N-CH 40V 6A PPAK 1212-8

Case Package:SOT-23

Datasheet:SI7216DN-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8 Dual
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-50°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	39mOhm
Subcategory	FET General Purpose Power
Max Power Dissipation	2.5W
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	SI7216
Pin Count	8
JESD-30 Code	S-XDSO-C6
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
Turn On Delay Time	9 ns
Power - Max	20.8W
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	32m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	670pF @ 20V
Current - Continuous Drain (Id) @ 25°C	6A
Gate Charge (Qg) (Max) @ Vgs	19nC @ 10V
Rise Time	57ns
Drain to Source Voltage (Vdss)	40V
Fall Time (Typ)	5 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	5A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	5 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Height	1.04mm
Length	3.05mm
Width	3.05mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free