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SI8402DB-T1-E1

SI8402DB-T1-E1

SI8402DB-T1-E1

Vishay Siliconix

MOSFET N-CH 20V 5.3A 2X2 4-MFP

SOT-23

SI8402DB-T1-E1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-XFBGA, CSPBGA
Number of Pins 4
Packaging Cut Tape (CT)
Published 2016
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 37MOhm
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory FET General Purpose Power
Max Power Dissipation 1.47W
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 4
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.47W
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 37m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 5.3A Ta
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Rise Time 145ns
Fall Time (Typ) 145 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 7.3A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 5.3A
Drain to Source Breakdown Voltage 20V
Height 355.6μm
Length 1.5748mm
Width 1.6002mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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