SI8402DB-T1-E1

new-10%

Manufacturer part number:SI8402DB-T1-E1

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 5.3A 2X2 4-MFP

Case Package:SOT-23

Datasheet:SI8402DB-T1-E1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	4-XFBGA, CSPBGA
Number of Pins	4
Packaging	Cut Tape (CT)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	37MOhm
Terminal Finish	Matte Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Subcategory	FET General Purpose Power
Max Power Dissipation	1.47W
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	BALL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
Number of Elements	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.47W
Turn On Delay Time	30 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	37m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Current - Continuous Drain (Id) @ 25°C	5.3A Ta
Gate Charge (Qg) (Max) @ Vgs	26nC @ 4.5V
Rise Time	145ns
Fall Time (Typ)	145 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	7.3A
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	5.3A
Drain to Source Breakdown Voltage	20V
Height	355.6μm
Length	1.5748mm
Width	1.6002mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free