SI8816EDB-T2-E1

new-10%

Manufacturer part number:SI8816EDB-T2-E1

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V MICRO FOOT

Case Package:SOT-23

Datasheet:SI8816EDB-T2-E1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	44 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	4-XFBGA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2015
Series	TrenchFET®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Pure Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	BALL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Power Dissipation-Max	500mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	109m Ω @ 1A, 10V
Vgs(th) (Max) @ Id	1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	195pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	8nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 10V
Vgs (Max)	±12V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	2.3A
Threshold Voltage	600mV
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	1.5A
Drain-source On Resistance-Max	0.123Ohm
Drain to Source Breakdown Voltage	30V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free