SIA923AEDJ-T1-GE3

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Manufacturer part number:SIA923AEDJ-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 2P-CH 20V 4.5A SC70-6L

Case Package:SOT-23

Datasheet:SIA923AEDJ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual
Number of Pins	6
Weight	28.009329mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Max Power Dissipation	7.8W
Terminal Form	NO LEAD
Base Part Number	SIA923
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	54m Ω @ 3.8A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	770pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	25nC @ 8V
Rise Time	16ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	4.5A
Threshold Voltage	-900mV
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.054Ohm
Drain to Source Breakdown Voltage	-20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant