SIZ200DT-T1-GE3

new-10%

Manufacturer part number:SIZ200DT-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH DUAL 30V

Case Package:SOT-23

Datasheet:SIZ200DT-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Supplier Device Package	8-PowerPair® (3.3x3.3)
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchFET® Gen IV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power - Max	4.3W Ta 33W Tc
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1510pF @ 15V 1600pF @ 15V
Current - Continuous Drain (Id) @ 25°C	22A Ta 61A Tc 22A Ta 60A Tc
Gate Charge (Qg) (Max) @ Vgs	28nC @ 10V, 30nC @ 10V
Drain to Source Voltage (Vdss)	30V
FET Feature	Standard
RoHS Status	ROHS3 Compliant